- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
13 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
54,053
Verfügbar auf Lager
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Vishay Semiconductors | MOSFET 60V -1.7A 2W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.7 A | 0.268 Ohms | - 2.5 V | 8.5 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
24,412
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 20V 6A 2W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 0.024 Ohms | 0.4 V | 8.5 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
2,154
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC | ||||||||
|
Ein Angebot |
1,620
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.4 Ohms | 3 V | 8.5 nC | Enhancement | ||||
|
Ein Angebot |
4,759
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 12Vgss 30A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 21 mOhms | 900 mV | 8.5 nC | Enhancement | ||||
|
Ein Angebot |
5
Verfügbar auf Lager
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Nexperia | MOSFET N-channel 80 V 98 mOhm MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 12.3 A | 70 mOhms | 3 V | 8.5 nC | |||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | SMD/SMT | TO-252-3 | - | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | +/- 4 A | 930 mOhms | 3.5 V | 8.5 nC | Enhancement | |||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 200 V | 8 A | 550 mOhms | 3.25 V | 8.5 nC | Enhancement | |||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 5 A | 970 mOhms | 3.5 V | 8.5 nC | Enhancement | |||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 970 mOhms | 3.5 V | 8.5 nC | Enhancement | |||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 8 A | 550 mOhms | 3.25 V | 8.5 nC | Enhancement | |||||
|
Ein Angebot |
12
Verfügbar auf Lager
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC | ||||||||
|
Ein Angebot |
18
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC |
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