MOSFET - Inix Electronic

Ausgewählter Filter :

3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQ2309ES-T1_GE3	1+ $0.2280 10+ $0.1680 100+ $0.1252 500+ $0.1060 3000+ $0.0744	Ein Angebot	PDF RFQ	54,053 Verfügbar auf Lager	Vishay Semiconductors	MOSFET 60V -1.7A 2W AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-236-3	- 55 C	+ 175 C	Reel	1 Channel	Si	P-Channel	- 60 V	- 1.7 A	0.268 Ohms	- 2.5 V	8.5 nC	Enhancement	TrenchFET
	SQ2310ES-T1_GE3	1+ $0.3040 10+ $0.2344 100+ $0.1780 500+ $0.1512 3000+ $0.1100	Ein Angebot	PDF RFQ	24,412 Verfügbar auf Lager	Vishay Semiconductors	MOSFET 20V 6A 2W AEC-Q101 Qualified	+/- 8 V	SMD/SMT	TO-236-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	20 V	6 A	0.024 Ohms	0.4 V	8.5 nC	Enhancement	TrenchFET
	BUK7Y98-80EX	1+ $0.2120 10+ $0.1748 100+ $0.1064 1000+ $0.0824 1500+ $0.0704	Ein Angebot	PDF RFQ	5 Verfügbar auf Lager	Nexperia	MOSFET N-channel 80 V 98 mOhm MOSFET	20 V	SMD/SMT	LFPAK56-5	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	80 V	12.3 A	70 mOhms	3 V	8.5 nC

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

Vishay Semiconductors

MOSFET 60V -1.7A 2W AEC-Q101 Qualified

Stock : 54,053

1+: $0.2280

10+: $0.1680

100+: $0.1252

500+: $0.1060

3000+: $0.0744

SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

Vishay Semiconductors

MOSFET 20V 6A 2W AEC-Q101 Qualified

Stock : 24,412

1+: $0.3040

10+: $0.2344

100+: $0.1780

500+: $0.1512

3000+: $0.1100

BUK7Y98-80EX

BUK7Y98-80EX

Nexperia

MOSFET N-channel 80 V 98 mOhm MOSFET

Stock : 5

1+: $0.2120

10+: $0.1748

100+: $0.1064

1000+: $0.0824

1500+: $0.0704

1 / 1 Seite

vorige Seite nächste Seite

Chat with usLiveChat