- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 200 V | 8 A | 550 mOhms | 3.25 V | 8.5 nC | Enhancement | |||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch Power MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 5 A | 970 mOhms | 3.5 V | 8.5 nC | Enhancement |
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