Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
RCX081N20
1+
$0.3480
10+
$0.2960
100+
$0.2272
500+
$0.2008
siehe
RFQ
ROHM Semiconductor MOSFET 10V Drive Nch Power MOSFET 30 V Through Hole TO-220FP-3 - 55 C + 150 C Bulk 1 Channel Si N-Channel 200 V 8 A 550 mOhms 3.25 V 8.5 nC Enhancement
RCX051N25
1+
$0.4280
10+
$0.3652
100+
$0.2804
500+
$0.2480
siehe
RFQ
ROHM Semiconductor MOSFET 10V Drive Nch Power MOSFET 30 V Through Hole TO-220FP-3 - 55 C + 150 C Bulk 1 Channel Si N-Channel 250 V 5 A 970 mOhms 3.5 V 8.5 nC Enhancement
IRLU8721PBF
1+
$0.5080
10+
$0.2248
100+
$0.1720
1000+
$0.1628
Ein Angebot
RFQ
18
Verfügbar auf Lager
Infineon / IR MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl 20 V Through Hole TO-251-3     Tube 1 Channel Si N-Channel 30 V 65 A 11.8 mOhms   8.5 nC