- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
10 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
586
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 138 A | 15 mOhms | 4 V | 414 nC | |||
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Ein Angebot |
371
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A | 25 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 130 A | 14 mOhms | 363 nC | ||||||
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Ein Angebot |
532
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET | 25 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 88 A | 22 mOhms | 4 V | ||||||
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Ein Angebot |
388
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 500 Volt 60 Amp | 30 V | Through Hole | Max247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 50 mOhms | Enhancement | ||||
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Ein Angebot |
596
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 200V 0.01 Ohm 130A STripFET II | 20 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 10 mOhms | 3 V | 338 nC | |||||
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Ein Angebot |
100
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power M... | +/- 30 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 1050 V | 44 A | 0.1 Ohms | 3 V | 175 nC | Enhancement | |||
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siehe | STMicroelectronics | MOSFET N-Ch 600 Volt 60 Amp | 30 V | Through Hole | Max247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 50 mOhms | Enhancement | |||||
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siehe | STMicroelectronics | MOSFET N-channel 600 V, 74A Power II Mdmesh | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 74 A | 35 mOhms | Enhancement | |||||
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siehe | STMicroelectronics | MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 96 A | 19 mOhms | 4 V | 350 nC | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET | 25 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 74 A | 29 mOhms | 4 V |
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