- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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Ein Angebot |
586
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 138 A | 15 mOhms | 4 V | 414 nC | ||
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Ein Angebot |
371
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A | 25 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 130 A | 14 mOhms | 363 nC | |||||
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siehe | STMicroelectronics | MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 96 A | 19 mOhms | 4 V | 350 nC |
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