- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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siehe | STMicroelectronics | MOSFET N-channel 600 V, 74A Power II Mdmesh | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 74 A | 35 mOhms | Enhancement | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET | 25 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 74 A | 29 mOhms | 4 V |
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