- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
28 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
688
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 900 Volt 15 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 550 mOhms | 190 nC | Enhancement | ||||
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Ein Angebot |
555
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 600V, 47A, SuperFET, Fast recovery | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 75 mOhms | 190 nC | SuperFET | ||||
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Ein Angebot |
671
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | ||
|
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Ein Angebot |
2,282
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | |||||||
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Ein Angebot |
125
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 1000 Volt 13A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 13 A | 700 mOhms | 190 nC | Enhancement | ||||
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Ein Angebot |
690
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 9999A | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 72 A | 3.7 mOhms | 190 nC | ||||||||
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Ein Angebot |
733
Verfügbar auf Lager
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Vishay Semiconductors | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
125
Verfügbar auf Lager
|
IXYS | MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 80 A | 70 mOhms | 5 V | 190 nC | HyperFET | |||||
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Ein Angebot |
754
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | - 180 A | 2.8 mOhms | 190 nC | OptiMOS | ||||
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Ein Angebot |
450
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement | |||||
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Ein Angebot |
246
Verfügbar auf Lager
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IXYS | MOSFET 170 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT, HiPerFET | ||
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Ein Angebot |
481
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||
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Ein Angebot |
280
Verfügbar auf Lager
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Vishay / Siliconix | MOSFET P Ch -100Vds 20Vgs | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 120 A | 0.0081 Ohms | - 2.5 V | 190 nC | Enhancement | |||
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Ein Angebot |
49
Verfügbar auf Lager
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IXYS | MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 80 A | 70 mOhms | 5 V | 190 nC | HyperFET | |||||
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Ein Angebot |
193
Verfügbar auf Lager
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Infineon Technologies | MOSFET 30V 1 N-CH 3.3mOhm HEXFET 75A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | Enhancement | ||||
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Ein Angebot |
128
Verfügbar auf Lager
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 2.6 mOhms | 4 V | 190 nC | Enhancement | |||
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Ein Angebot |
23
Verfügbar auf Lager
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IXYS | MOSFET 70 Amps 600V | 20 V | SMD/SMT | TO-247-SMD-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | |||
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Ein Angebot |
99
Verfügbar auf Lager
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | ||
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Ein Angebot |
46
Verfügbar auf Lager
|
IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | ||
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|
Ein Angebot |
1
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | ||
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|
Ein Angebot |
800
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 4 V | 190 nC | ||||
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|
Ein Angebot |
30
Verfügbar auf Lager
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 104 mOhms | 190 nC | HyperFET | ||||||
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siehe | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 190 nC | HyperFET | |||||||
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siehe | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 48 A | 76 mOhms | 5 V | 190 nC | Enhancement | Polar3, HiperFET | ||||
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siehe | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 190 nC | HyperFET | |||||||
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siehe | Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | |||
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siehe | Vishay / Siliconix | MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | ||||
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siehe | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement |
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