- Hersteller :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
555
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V, 47A, SuperFET, Fast recovery | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 75 mOhms | 190 nC | SuperFET | |||||
|
Ein Angebot |
671
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
125
Verfügbar auf Lager
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IXYS | MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 80 A | 70 mOhms | 5 V | 190 nC | HyperFET | ||||||
|
Ein Angebot |
49
Verfügbar auf Lager
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IXYS | MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 80 A | 70 mOhms | 5 V | 190 nC | HyperFET | ||||||
|
Ein Angebot |
23
Verfügbar auf Lager
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IXYS | MOSFET 70 Amps 600V | 20 V | SMD/SMT | TO-247-SMD-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | ||||
|
Ein Angebot |
1
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
30
Verfügbar auf Lager
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 104 mOhms | 190 nC | HyperFET | |||||||
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siehe | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 190 nC | HyperFET | ||||||||
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siehe | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 48 A | 76 mOhms | 5 V | 190 nC | Enhancement | Polar3, HiperFET | |||||
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siehe | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 190 nC | HyperFET | ||||||||
|
siehe | Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS |
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