MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQM120N10-3m8_GE3	1+ $1.2800 10+ $1.0280 100+ $0.9360 250+ $0.8440 800+ $0.6400	Ein Angebot	PDF RFQ	733 Verfügbar auf Lager	Vishay Semiconductors	MOSFET N-Channel 100V AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	120 A	0.003 Ohms	2.5 V	190 nC	Enhancement	TrenchFET
	IPB180P04P4-03	1+ $0.9240 10+ $0.7840 100+ $0.6280 500+ $0.5480 1000+ $0.4560	Ein Angebot	PDF RFQ	754 Verfügbar auf Lager	Infineon Technologies	MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2	20 V	SMD/SMT	TO-263-7	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	40 V	- 180 A	2.8 mOhms		190 nC		OptiMOS
	IRF3805STRLPBF	1+ $1.2680 10+ $1.0800 100+ $0.9360 250+ $0.8880 800+ $0.6680	Ein Angebot	PDF RFQ	800 Verfügbar auf Lager	Infineon Technologies	MOSFET MOSFT 55V 220A 3.3mOhm 190nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	55 V	210 A	3.3 mOhms	4 V	190 nC

SQM120N10-3m8_GE3

SQM120N10-3m8_GE3

Vishay Semiconductors

MOSFET N-Channel 100V AEC-Q101 Qualified

Stock : 733

1+: $1.2800

10+: $1.0280

100+: $0.9360

250+: $0.8440

800+: $0.6400

IPB180P04P4-03

IPB180P04P4-03

Infineon Technologies

MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2

Stock : 754

1+: $0.9240

10+: $0.7840

100+: $0.6280

500+: $0.5480

1000+: $0.4560

IRF3805STRLPBF

IRF3805STRLPBF

Infineon Technologies

MOSFET MOSFT 55V 220A 3.3mOhm 190nC

Stock : 800

1+: $1.2680

10+: $1.0800

100+: $0.9360

250+: $0.8880

800+: $0.6680

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