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- Rds On - Drain-Source Resistance :
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45 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
6,252
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 0.7mOhms 64nC | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 270 A | 1 MOhms | 1.9 V | 64 nC | Directfet | ||||
|
Ein Angebot |
18,212
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
3,863
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 8.7 mOhms | 1.9 V | 64 nC | PowerTrench | ||||
|
Ein Angebot |
14,101
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
1,304
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
738
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
5,125
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
880
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 650 V MDMesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 64 nC | ||||||
|
Ein Angebot |
419
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V 22 A | 3 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 139 mOhms | 5 V | 64 nC | ||||||
|
Ein Angebot |
3,740
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 4 V | 64 nC | ||||||
|
Ein Angebot |
528
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
1,426
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15.4 mOhms | 2.4 V | 64 nC | Enhancement | OptiMOS | |||
|
Ein Angebot |
228
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3.5 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
2,086
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 85 A | 9.5 mOhms | 1.7 V | 64 nC | Enhancement | ||||
|
Ein Angebot |
235
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
133
Verfügbar auf Lager
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
|
Ein Angebot |
1,205
Verfügbar auf Lager
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 5.9 mOhms | 2 V | 64 nC | Enhancement | ||||
|
Ein Angebot |
115
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
29
Verfügbar auf Lager
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 1.05 Ohms | 64 nC | HyperFET | |||||||
|
Ein Angebot |
48
Verfügbar auf Lager
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.2 Ohms | 64 nC | HyperFET | |||||||
|
Ein Angebot |
498
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contai... | 30 V | Through Hole | TO-220FP-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | +/- 21 A | 160 mOhms | 2.5 V | 64 nC | Enhancement | |||||
|
Ein Angebot |
12,000
Verfügbar auf Lager
|
Nexperia | MOSFET N-CHANNEL 100V STD LEVEL MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 23 mOhms | 4.6 V | 64 nC | Enhancement | ||||
|
Ein Angebot |
461
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 20 mOhms | 64 nC | OptiMOS | |||||
|
Ein Angebot |
240
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
1,500
Verfügbar auf Lager
|
Texas Instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 840 uOhms | 1.1 V | 64 nC | Enhancement | ||||
|
siehe | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
|
siehe | ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET Drive Pch | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 85 mOhms | - 2.5 V | 64 nC | Enhancement | |||||
|
Ein Angebot |
110
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.6 A | 850 mOhms | 3.75 V | 64 nC | Enhancement |
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