- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,863
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 8.7 mOhms | 1.9 V | 64 nC | PowerTrench | |||
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siehe | Infineon Technologies | MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
2,029
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 64 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET N-Ch 60V 45A I2PAK-3 OptiMOS-T2 | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7 mOhms | 1.2 V | 64 nC | Enhancement |
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