- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
29 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
18,212
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
14,101
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
1,304
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||
|
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Ein Angebot |
738
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | ||
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|
Ein Angebot |
5,125
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
880
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 650 V MDMesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 64 nC | |||||
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Ein Angebot |
419
Verfügbar auf Lager
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V 22 A | 3 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 139 mOhms | 5 V | 64 nC | |||||
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Ein Angebot |
3,740
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 4 V | 64 nC | |||||
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Ein Angebot |
528
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
228
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3.5 V | 64 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
235
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
115
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
498
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contai... | 30 V | Through Hole | TO-220FP-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | +/- 21 A | 160 mOhms | 2.5 V | 64 nC | Enhancement | ||||
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Ein Angebot |
240
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
1,500
Verfügbar auf Lager
|
Texas Instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 840 uOhms | 1.1 V | 64 nC | Enhancement | |||
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siehe | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET Drive Pch | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 85 mOhms | - 2.5 V | 64 nC | Enhancement | ||||
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Ein Angebot |
110
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.6 A | 850 mOhms | 3.75 V | 64 nC | Enhancement | |||
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Ein Angebot |
488
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | ||
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siehe | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel, NPN | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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siehe | ROHM Semiconductor | MOSFET TRANS MOSFET NCH 500V 21A LPT | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 21 A | 170 mOhms | 2.5 V | 64 nC | Enhancement | ||||
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Ein Angebot |
400
Verfügbar auf Lager
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.8 A | 390 mOhms | 2.1 V | 64 nC | Enhancement | CoolMOS |
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