- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN2020MD-6 (1)
- ECH-8 (3)
- HSSO-8 (1)
- ISOTOP-4 (1)
- PLUS-247-3 (1)
- Power-33-8 (1)
- Power-56-8 (1)
- PowerFLAT-5x6-8 (1)
- SC-59-3 (1)
- SMD-24 (2)
- SO-8 (6)
- SO-FL-8 (3)
- SOP-8 (1)
- SOP-Advance-8 (2)
- SOT-227-4 (3)
- SOT-23-3 (2)
- SOT-26-6 (1)
- SOT-363-6 (2)
- SSOT-6 (2)
- TDSON-8 (1)
- TO-220-3 (6)
- TO-220FP-3 (1)
- TO-247-3 (12)
- TO-251-3 (1)
- TO-252-3 (7)
- TO-252-5 (2)
- TO-263-3 (3)
- TO-264-3 (6)
- TO-268-3 (3)
- TO-3P-3 (2)
- TSDSON-8 (1)
- TSOP-6 (1)
- TSSOP-8 (1)
- uDFN-6 (2)
- UMLP-6 (1)
- WDFN-8 (4)
- WSON-FET-6 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 6 A (1)
- - 7 A (2)
- - 76 A (1)
- - 8 A (2)
- - 8.8 A (1)
- 100 A (1)
- 108 A (1)
- 110 A (4)
- 115 A (1)
- 120 A (7)
- 14.4 A (1)
- 140 A (2)
- 15 A (1)
- 16 A (1)
- 20 A (5)
- 24 A (1)
- 26 A (3)
- 28 A (1)
- 31 A (1)
- 32 A (2)
- 33 A (1)
- 37 A (2)
- 38 A (1)
- 4.2 A (1)
- 4.7 A (1)
- 44 A (1)
- 46 A (4)
- 5 A (1)
- 5.4 A (2)
- 5.6 A (1)
- 50 A (3)
- 6 A (1)
- 6.2 A (2)
- 6.5 A (1)
- 65 A (1)
- 69 A (1)
- 7 A (7)
- 7.3 A (1)
- 8 A (1)
- 8.3 A (1)
- 8.5 A (1)
- 80 A (3)
- 84 A (1)
- 88 A (1)
- 9 A (3)
- 96 A (8)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 103 nC (3)
- 11.8 nC, 13 nC (1)
- 110 nC (1)
- 12.9 nC (2)
- 13.2 nC (1)
- 14 nC (1)
- 145 nC (4)
- 15.3 nC (1)
- 15.8 nC (2)
- 185 nC (3)
- 19 nC (3)
- 2.1 nC (1)
- 20 nC (1)
- 203 nC (1)
- 204 nC (1)
- 22 nC (1)
- 225 nC (3)
- 240 nC (1)
- 265 nC (2)
- 3.9 nC (1)
- 30 nC (1)
- 33.3 nC (4)
- 37 nC (1)
- 43.3 nC (1)
- 500 nC (3)
- 6.2 nC (1)
- 6.7 nC (1)
- 65 nC (1)
- 70 nC (1)
- 8.4 nC (1)
- 8.8 nC (2)
- 97 nC (1)
- Ausgewählter Filter :
90 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
601
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 24 mOhms | 4 V | 240 nC | Enhancement | MDmesh | |||
|
|
Ein Angebot |
43,925
Verfügbar auf Lager
|
Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 400 mV | 6.2 nC | Enhancement | ||||
|
|
Ein Angebot |
6,055
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET P-CHAN -20V -8A 2.1W | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 8 A | 24 mOhms | PowerTrench | ||||||||
|
|
Ein Angebot |
11,840
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 9 A | 24 mOhms | Enhancement | PowerTrench | |||||
|
|
Ein Angebot |
4,203
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 24 mOhms | 1.6 V | 15.3 nC | PowerTrench | ||||
|
|
Ein Angebot |
1,821
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | |||||
|
|
|
Ein Angebot |
1,088
Verfügbar auf Lager
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
|
|
Ein Angebot |
1,483
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 100 Volt 50 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 24 mOhms | Enhancement | ||||||
|
|
|
Ein Angebot |
432
Verfügbar auf Lager
|
IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
|
|
Ein Angebot |
221
Verfügbar auf Lager
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohms Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | Enhancement | HyperFET | |||||
|
|
Ein Angebot |
2,275
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 100V 0.020Ohm 10A STripFET VII | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 20 A | 24 mOhms | 4 V | 14 nC | |||||
|
|
|
Ein Angebot |
384
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 69 A | 24 mOhms | 4 V | 203 nC | Enhancement | MDmesh | |||
|
|
Ein Angebot |
2,217
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | |||||
|
|
Ein Angebot |
3,815
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||
|
|
Ein Angebot |
65
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | ISOTOP-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 88 A | 24 mOhms | 3 V | 204 nC | Enhancement | ||||
|
|
Ein Angebot |
14,486
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 20V N-Channel 2.5V Spec PowerTrench | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 24 mOhms | Enhancement | PowerTrench | |||||
|
|
Ein Angebot |
3,472
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 24 mOhms | Enhancement | PowerTrench | |||||
|
|
|
Ein Angebot |
2,220
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Dual N&PCH PwrTrench +/- 40V,20A | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 9 A | 24 mOhms | Enhancement | PowerTrench | ||||||
|
|
|
Ein Angebot |
2,740
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 DUAL P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 6 A | 24 mOhms | Enhancement | PowerTrench | |||||
|
|
|
Ein Angebot |
1,380
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 24 mOhms | Enhancement | PowerTrench | |||||
|
|
|
Ein Angebot |
2,235
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V NChannel UniFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 24 mOhms | UltraFET | |||||||
|
|
|
Ein Angebot |
1,981
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 55V 28A 24mOhm 43.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 28 A | 24 mOhms | 43.3 nC | ||||||||
|
|
|
Ein Angebot |
2,287
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | Enhancement | |||||
|
|
Ein Angebot |
7,391
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET DUAL N-CHANNEL | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.5 A | 24 mOhms | 0.9 V | 8.8 nC | Enhancement | ||||
|
|
|
Ein Angebot |
170
Verfügbar auf Lager
|
IXYS | MOSFET MOSFET N CHANNEL | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 24 mOhms | 2.5 V | 103 nC | Enhancement | ||||
|
|
Ein Angebot |
43
Verfügbar auf Lager
|
IXYS | MOSFET 100Amps 200V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 100 A | 24 mOhms | 4.5 V | 500 nC | Enhancement | Linear L2 | ||||
|
|
|
Ein Angebot |
1,898
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | Enhancement | ||||
|
|
Ein Angebot |
226
Verfügbar auf Lager
|
IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | ||||
|
|
|
Ein Angebot |
513
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V NCHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 24 mOhms | PowerTrench |
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