- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
15 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
1,380
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6 A | 24 mOhms | Enhancement | PowerTrench | ||||||
|
Ein Angebot |
2,287
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | Enhancement | ||||||
|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | |||||
|
Ein Angebot |
1,248
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V Dual N-channel Enhance. Mode MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.3 A | 24 mOhms | Enhancement | |||||||
|
Ein Angebot |
2,471
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | |||||
|
Ein Angebot |
2,015
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.4 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | |||||
|
Ein Angebot |
414
Verfügbar auf Lager
|
ON Semiconductor | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 7 A | 24 mOhms | 11.8 nC, 13 nC | |||||||
|
Ein Angebot |
1,204
Verfügbar auf Lager
|
Texas Instruments | MOSFET Automotive 30-V N-Channel NexFET? Power MOSFET 6-WS... | 10 V, 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 24 mOhms | 1.3 V | 2.1 nC | Enhancement | NexFET | |||
|
Ein Angebot |
210
Verfügbar auf Lager
|
Panasonic | MOSFET 30V Dual N-ch Power MOSFET 3.3x3.25mm | SMD/SMT | HSSO-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 24 mOhms | 1.3 V to 3 V | 3.9 nC | |||||||
|
siehe | ROHM Semiconductor | MOSFET 30V, 7A; DC-DC Conv. Switch, Dual | SOP-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 7 A | 24 mOhms | Enhancement | ||||||||||||
|
Ein Angebot |
1,714
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | ||||||||||
|
Ein Angebot |
2,900
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NCH+NCH 4V DRIVE SERIES | SMD/SMT | ECH-8 | Reel | Si | N-Channel | 30 V | 7 A | 24 mOhms | ||||||||||||
|
Ein Angebot |
493
Verfügbar auf Lager
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | Enhancement | ||||||
|
Ein Angebot |
1,675
Verfügbar auf Lager
|
ON Semiconductor | MOSFET SWITCHING DEVICE | SMD/SMT | ECH-8 | Reel | Si | N-Channel | 30 V | 7 A | 24 mOhms | ||||||||||||
|
Ein Angebot |
167
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC |
1 / 1 Seite