Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRLB3813PBF
1+
$0.6280
10+
$0.5320
100+
$0.4280
500+
$0.3720
Ein Angebot
RFQ
2,560
Verfügbar auf Lager
Infineon Technologies MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 260 A 1.95 mOhms 1.9 V 57 nC  
BUK752R3-40E,127
1+
$0.8640
10+
$0.7360
100+
$0.5880
500+
$0.5120
Ein Angebot
RFQ
995
Verfügbar auf Lager
Nexperia MOSFET BUK752R3-40E/SIL3P/STANDARD MA 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 120 A 1.95 mOhms 2.4 V 109.2 nC Enhancement