- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
2,560
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.95 mOhms | 1.9 V | 57 nC | ||||
|
|
Ein Angebot |
940
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 30V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 247 A | 1.95 mOhms | 2.35 V | 55 nC | ||||
|
|
Ein Angebot |
75
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 60 V | 255 A | 1.95 mOhms | 3.7 V | 300 nC | StrongIRFET | ||||||
|
|
Ein Angebot |
4,940
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 30 A | 1.95 mOhms | Enhancement | OptiMOS | ||||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 25V N-Chan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 49 A | 1.95 mOhms | 1.7 V | 22 nC | ||||
|
|
Ein Angebot |
995
Verfügbar auf Lager
|
Nexperia | MOSFET BUK752R3-40E/SIL3P/STANDARD MA | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.95 mOhms | 2.4 V | 109.2 nC | Enhancement |
1 / 1 Seite
