- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
4,563
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 650mW 20V | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2 A | 165 mOhms | 1 V | Enhancement | |||
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Ein Angebot |
3,023
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | ||
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Ein Angebot |
3,547
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS | 6 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 1.34 A, - 1.14 A | 700 mOhms, 1.3 Ohms | 1 V | 736.6 pC | Enhancement | ||
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Ein Angebot |
382
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 40 mOhms | 1 V | 14.5 nC | Enhancement |
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