- Hersteller :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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Ein Angebot |
4,800
Verfügbar auf Lager
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Infineon / IR | MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC | 20 V | SMD/SMT | DirectFET-ST | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 9.7 mOhms | 2.2 V | 11 nC | |||
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siehe | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC | 20 V | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.3 mOhms | 11 nC |
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