- Hersteller :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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Ein Angebot |
4,800
Verfügbar auf Lager
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Infineon / IR | MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC | SMD/SMT | DirectFET-ST | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 9.7 mOhms | 2.2 V | 11 nC | |||
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Ein Angebot |
4,800
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 40 V | 12.7 A | 7.1 mOhms | 19 nC | Directfet | |||||
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siehe | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.3 mOhms | 11 nC | |||||||
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siehe | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 20 V | 18 A | 4.6 mOhms | 18 nC |
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