- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,867
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||
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Ein Angebot |
2,926
Verfügbar auf Lager
|
STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power M... | +/- 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8 A | 20.5 mOhms | 1 V to 2.5 V | 22 nC | Enhancement | ||
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Ein Angebot |
1,341
Verfügbar auf Lager
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 12 mOhms | - 1 V | 24 nC | Enhancement | ||
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Ein Angebot |
5,596
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 8 V | SMD/SMT | PowerFLAT-3.3x3.3-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 9 A | 85 mOhms | 400 mV | 22 nC |
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