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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
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Verfügbar auf Lager
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Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET |
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