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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
9,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | - 3 V | 17.7 nC | Enhancement |
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