- Hersteller :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
7 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||
|
|
Ein Angebot |
1,449
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.5 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | ||
|
|
Ein Angebot |
130
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.2 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | ||
|
|
Ein Angebot |
9,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | - 3 V | 17.7 nC | Enhancement | ||
|
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 800 V, 0.75 Ohm typ., 7 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||
|
|
Ein Angebot |
600
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||
|
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement |
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