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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
4,407
Verfügbar auf Lager
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K | - 5 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 102 mOhms | 3.7 nC | Enhancement |
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