- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
3,488
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 20mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 mA | 60 Ohms | - 1.4 V | 3.7 nC | Depletion | |||
|
Ein Angebot |
3,864
Verfügbar auf Lager
|
STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | |||
|
Ein Angebot |
4,407
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K | - 5 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 102 mOhms | 3.7 nC | Enhancement | ||||
|
Ein Angebot |
13,559
Verfügbar auf Lager
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 120 mOhms | - 950 mV | 3.7 nC | Enhancement | |||
|
Ein Angebot |
500
Verfügbar auf Lager
|
ON Semiconductor | MOSFET PCH 0.7A 100V SOT-23 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 700 mA | 1.3 Ohms | - 2.6 V | 3.7 nC | Enhancement | |||
|
Ein Angebot |
2,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | |||
|
Ein Angebot |
2,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | |||
|
Ein Angebot |
2,500
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | |||
|
siehe | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 260 mA | 6 Ohms | - 800 mV | 3.7 nC | Enhancement | ||||
|
siehe | Toshiba | MOSFET N-CH FET 3.7nC 100uA 200V VDSS 5.5A | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 200 V | 5.5 A | 450 mOhms | 3.7 nC |
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