- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
28 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
1,374
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 640 mOhms | 5 V | 23 nC | UniFET | ||||||
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Ein Angebot |
917
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 3 V to 5 V | 23 nC | UniFET | ||||
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Ein Angebot |
1,360
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 600N-Channel MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 640 mOhms | 5 V | 23 nC | UniFET | ||||
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Ein Angebot |
1,380
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | ||||||||
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Ein Angebot |
477
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
561
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 23 nC | CoolMOS | |||||
|
Ein Angebot |
318
Verfügbar auf Lager
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
547
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 23 nC | Enhancement | CoolMOS | ||||
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Ein Angebot |
446
Verfügbar auf Lager
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
490
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
79
Verfügbar auf Lager
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
958
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 105 A | 7.1 mOhms | 23 nC | ||||||||
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Ein Angebot |
450
Verfügbar auf Lager
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 1.22 Ohms | 2.1 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
368
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 700V 7.3A I2PAK-3 CoolMOS C6 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.3 A | 600 mOhms | 23 nC | CoolMOS | |||||
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Ein Angebot |
240
Verfügbar auf Lager
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
195
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
117
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 5 V | 23 nC | UniFET | ||||||
|
Ein Angebot |
400
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | ||||||
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Ein Angebot |
400
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | ||||||
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Ein Angebot |
390
Verfügbar auf Lager
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Toshiba | MOSFET 100V N-Ch PWR FET 60A 67W 23nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 60 A | 10.4 mOhms | 23 nC | |||||||||
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Ein Angebot |
490
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 9 A | 500 mOhms | 2 V | 23 nC | Enhancement | ||||
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Ein Angebot |
316
Verfügbar auf Lager
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Toshiba | MOSFET MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.4 mOhms | 2 V to 4 V | 23 nC | Enhancement | |||||
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siehe | Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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siehe | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 8 A | 850 mOhms | 2 V | 23 nC | Enhancement | |||||
|
Ein Angebot |
129
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 500V 12A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 3 V | 23 nC | CoolMOS | ||||
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Ein Angebot |
54
Verfügbar auf Lager
|
Infineon / IR | MOSFET Automotive MOSFET 55m, 23nC Qg | Through Hole | TO-220-3 | Tube | Si | N-Channel | 55 V | 21 A | 40 mOhms | 23 nC |
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