- Mounting Style :
- Package / Case :
-
- DFN2020MD-6 (2)
- HSOF-8 (1)
- HSOP-8 (1)
- LFPAK56-5 (2)
- Power-56-8 (1)
- PQFN-8 (1)
- SO-8 (6)
- SO-FL-8 (3)
- SOP-8 (1)
- SOP-Advance-8 (2)
- SOT-223-4 (2)
- SOT-346-3 (1)
- TDSON-8 (5)
- TO-220-3 (11)
- TO-220FP-3 (12)
- TO-220SIS-3 (1)
- TO-247-3 (2)
- TO-251-3 (1)
- TO-252-3 (14)
- TO-262-3 (1)
- TO-263-3 (5)
- TSDSON-8 (5)
- TSON-Advance-8 (1)
- VSON-4 (4)
- VSON-Clip-8 (1)
- VSONP-8 (1)
- WDSON-2-3 (2)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 4.8 A (1)
- - 4.9 A (3)
- 10 A (2)
- 10.1 A (1)
- 100 A (4)
- 102 A (1)
- 105 A (1)
- 11.5 A (4)
- 12 A (4)
- 12.9 A (2)
- 13 A (8)
- 17 A (1)
- 18 A (1)
- 20 A (1)
- 21 A (1)
- 24 A (1)
- 3.7 A (2)
- 3.9 A (2)
- 35 A (1)
- 37 A (1)
- 40 A (8)
- 44 A (2)
- 45 A (1)
- 5 A, 10 A (1)
- 50 A (1)
- 60 A (8)
- 61 A (1)
- 7 A (3)
- 7.3 A (9)
- 75 A (2)
- 78 A (2)
- 8 A (3)
- 8.5 A (1)
- 9 A (5)
- 90 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.22 Ohms (1)
- 1.4 Ohms (1)
- 1.7 mOhms (1)
- 10 mOhms (1)
- 10.4 mOhms (1)
- 10.6 mOhms (1)
- 11.3 mOhms (1)
- 12.4 mOhms (1)
- 129 mOhms (1)
- 13.5 mOhms (1)
- 14.4 mOhms (1)
- 16 mOhms (1)
- 168 mOhms (10)
- 17 mOhms (4)
- 173 mOhms (2)
- 19 mOhms (1)
- 2 mOhms (3)
- 2.5 mOhms (2)
- 2.6 mOhms (1)
- 2.7 mOhms (1)
- 22.5 mOhms (5)
- 22.6 mOhms (1)
- 25 mOhms (1)
- 299 mOhms (2)
- 3.3 mOhms (3)
- 3.4 mOhms (1)
- 3.7 mOhms (1)
- 31 mOhms (1)
- 360 mOhms (1)
- 380 mOhms (2)
- 4.2 mOhms (1)
- 4.35 mOhms (1)
- 40 mOhms (1)
- 45 mOhms (2)
- 460 mOhms (2)
- 500 mOhms (2)
- 540 mOhms (7)
- 55 mOhms (1)
- 58 mOhms (2)
- 594 mOhms (2)
- 600 mOhms (3)
- 640 mOhms (2)
- 7.1 mOhms (1)
- 7.2 mOhms (1)
- 7.3 mOhms (2)
- 7.6 mOhms (1)
- 76 mOhms (1)
- 8.3 mOhms (2)
- 8.4 mOhms (1)
- 850 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
90 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
1,480
Verfügbar auf Lager
|
ON Semiconductor | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 102 A | 2.7 mOhms | 2.5 V | 23 nC | Enhancement | |||
|
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | |||
|
|
Ein Angebot |
11,702
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||
|
|
Ein Angebot |
3,890
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||
|
|
Ein Angebot |
1,030
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||
|
|
Ein Angebot |
10,792
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | ||||
|
|
Ein Angebot |
6,017
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | ||
|
|
Ein Angebot |
4,481
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 35 A | 19 mOhms | 3 V | 23 nC | Enhancement | ||||
|
|
Ein Angebot |
5,907
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.7 mOhms | 2.2 V | 23 nC | OptiMOS | |||
|
|
|
Ein Angebot |
6,500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | ||
|
|
Ein Angebot |
4,352
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | |||
|
|
Ein Angebot |
1,374
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 640 mOhms | 5 V | 23 nC | UniFET | |||||
|
|
|
Ein Angebot |
917
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 3 V to 5 V | 23 nC | UniFET | |||
|
|
Ein Angebot |
1,360
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 600N-Channel MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 640 mOhms | 5 V | 23 nC | UniFET | |||
|
|
|
Ein Angebot |
2,355
Verfügbar auf Lager
|
Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | 23 nC | Enhancement | ||||
|
|
|
Ein Angebot |
506
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||
|
|
|
Ein Angebot |
1,602
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,466
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 23 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,499
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.3 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||
|
|
|
Ein Angebot |
2,375
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 15.5mOhms 23nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 0.8 V to 2 V | 23 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,954
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 40V 9A 15.5mOhm 23nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 23 nC | |||||||
|
|
Ein Angebot |
1,380
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | |||||||
|
|
|
Ein Angebot |
734
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||
|
|
|
Ein Angebot |
2,443
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||
|
|
|
Ein Angebot |
1,728
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | |||||
|
|
Ein Angebot |
2,751
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 18 A | 4.2 mOhms | 1.5 V | 23 nC | Enhancement | PowerTrench SyncFET | |||
|
|
|
Ein Angebot |
477
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||
|
|
|
Ein Angebot |
927
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | ||||
|
|
Ein Angebot |
815
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 60 V 11.3 mOhm MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 61 A | 11.3 mOhms | 3 V | 23 nC | Enhancement | |||
|
|
Ein Angebot |
785
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT 55V 3.7A 45mOhm 23nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 3.7 A | 45 mOhms | 23 nC |
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