- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
1,013
Verfügbar auf Lager
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10 A | 140 mOhms | 1 V | 7.9 nC | ||
|
|
Ein Angebot |
1,558
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 11.7 mOhms | 2.5 V | 7.9 nC | ||
|
|
|
siehe | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10 A | 140 mOhms | 1 V | 7.9 nC |
1 / 1 Seite
