- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
9 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,953
Verfügbar auf Lager
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Nexperia | MOSFET Dual N-channel 40 V 25 mo FET | 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 27 A | 21.25 mOhms | 3 V | 7.9 nC | Enhancement | ||||
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Ein Angebot |
1,171
Verfügbar auf Lager
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Nexperia | MOSFET N-channel 80 V 78 mo FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 15 A | 65 mOhms | 1.7 V | 7.9 nC | Enhancement | ||||
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Ein Angebot |
1,013
Verfügbar auf Lager
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Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10 A | 140 mOhms | 1 V | 7.9 nC | |||||
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Ein Angebot |
898
Verfügbar auf Lager
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Texas Instruments | MOSFET 30V NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 8.2 mOhms | 1.5 V | 7.9 nC | NexFET | ||||
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Ein Angebot |
860
Verfügbar auf Lager
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Texas Instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement | ||||
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Ein Angebot |
1,558
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 11.7 mOhms | 2.5 V | 7.9 nC | |||||
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siehe | ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.7 mOhms | 2.5 V | 7.9 nC | ||||||
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siehe | Nexperia | MOSFET N-channel 40 V 29 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 26 A | 22.7 mOhms | 3 V | 7.9 nC | Enhancement | |||||
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siehe | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10 A | 140 mOhms | 1 V | 7.9 nC |
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