- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,363
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | ||||
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Ein Angebot |
150
Verfügbar auf Lager
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ON Semiconductor | MOSFET 60V 12A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 94 mOhms | Enhancement | ||||
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Ein Angebot |
27,273
Verfügbar auf Lager
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 94 mOhms | - 0.3 V to - 1 V | 14.1 nC | |||
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siehe | ON Semiconductor | MOSFET NFET DPAK 60V .094R TR | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 94 mOhms | |||||||||
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siehe | Taiwan Semiconductor | MOSFET 20V P Channel Mosfet with schottky diode | SMD/SMT | TDFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.8 A | 94 mOhms |
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