- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,363
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | ||||||
|
Ein Angebot |
1,381
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 250V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | UniFET | |||||
|
Ein Angebot |
32
Verfügbar auf Lager
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 94 mOhms | 145 nC | HyperFET | |||||||
|
Ein Angebot |
150
Verfügbar auf Lager
|
ON Semiconductor | MOSFET 60V 12A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 94 mOhms | Enhancement | ||||||
|
Ein Angebot |
27,273
Verfügbar auf Lager
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 94 mOhms | - 0.3 V to - 1 V | 14.1 nC | |||||
|
Ein Angebot |
1,955
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | ||||||
|
siehe | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | |||||
|
siehe | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | |||||
|
siehe | ON Semiconductor | MOSFET NFET DPAK 60V .094R TR | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 94 mOhms | |||||||||||
|
siehe | Taiwan Semiconductor | MOSFET 20V P Channel Mosfet with schottky diode | SMD/SMT | TDFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.8 A | 94 mOhms |
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