Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Packaging :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STB10LN80K5
1+
$1.1080
10+
$0.9400
100+
$0.7520
500+
$0.6600
1000+
$0.5480
Ein Angebot
RFQ
950
Verfügbar auf Lager
STMicroelectronics MOSFET POWER MOSFET 30 V SMD/SMT TO-263-3   + 150 C Reel 1 Channel Si N-Channel 800 V 8 A 550 mOhms 3 V 15 nC Enhancement
RCX081N20
1+
$0.3480
10+
$0.2960
100+
$0.2272
500+
$0.2008
siehe
RFQ
ROHM Semiconductor MOSFET 10V Drive Nch Power MOSFET 30 V Through Hole TO-220FP-3 - 55 C + 150 C Bulk 1 Channel Si N-Channel 200 V 8 A 550 mOhms 3.25 V 8.5 nC Enhancement
RCJ081N20TL
1+
$0.3840
10+
$0.3248
100+
$0.2496
500+
$0.2208
1000+
$0.1740
siehe
RFQ
ROHM Semiconductor MOSFET 10V Drive Nch Power MOSFET 30 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 200 V 8 A 550 mOhms 3.25 V 8.5 nC Enhancement