- Hersteller :
-
- Central Semiconductor (1)
- Diodes Incorporated (4)
- Fairchild Semiconductor (20)
- GeneSiC Semiconductor (1)
- Infineon Technologies (9)
- IXYS (17)
- Microsemi (4)
- ON Semiconductor (3)
- Panasonic (3)
- ROHM Semiconductor (16)
- Shindengen (1)
- STMicroelectronics (34)
- Taiwan Semiconductor (2)
- Texas Instruments (3)
- Toshiba (12)
- Vishay Semiconductors (6)
- Infineon / IR (1)
- Vishay / Siliconix (3)
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- BGA-6 (2)
- D3PAK-3 (1)
- DFN2020-8 (2)
- ECH-8 (1)
- HSMT-8 (2)
- MLP-12 (1)
- PLUS-247-3 (1)
- PowerFLAT-3.3x3.3-8 (1)
- PowerFLAT-5x6-8 (1)
- PowerFLAT-5x6-HV-8 (3)
- PowerPAK-1212-8 (3)
- SO-8 (6)
- SOIC-8 (4)
- SOT-23-3 (2)
- SOT-363-6 (1)
- SOT-416-3 (1)
- SSOT-3 (1)
- SSOT-6 (1)
- TO-220-3 (26)
- TO-220FP-3 (26)
- TO-247-3 (6)
- TO-247AB-3 (1)
- TO-251-3 (4)
- TO-252-3 (14)
- TO-262-3 (3)
- TO-263-3 (10)
- TO-264-3 (1)
- TO-39-3 (1)
- TO-3PF-3 (1)
- TO-3PN-3 (2)
- TSON-Advance-8 (2)
- TSOP-6 (4)
- U-DFN2020-E-6 (1)
- WMini-8 (3)
- WSON-FET-6 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.014 Ohms (1)
- 0.02 Ohms (1)
- 0.0235 Ohms (1)
- 0.025 Ohms (1)
- 0.026 Ohms (3)
- 0.03 Ohms (1)
- 0.05 Ohms (1)
- 1.03 Ohms (1)
- 1.1 Ohms (1)
- 1.3 Ohms (2)
- 1.4 Ohms (3)
- 1.42 Ohms (1)
- 1.45 Ohms (2)
- 1.5 Ohms (2)
- 1.53 Ohms (1)
- 1.55 Ohms (3)
- 1.9 Ohms (1)
- 10.5 mOhms (1)
- 11 mOhms (2)
- 14 mOhms (1)
- 16 mOhms (1)
- 16.7 mOhms (1)
- 168 mOhms (2)
- 17.5 mOhms (1)
- 17.6 mOhms (2)
- 17.8 mOhms (2)
- 180 mOhms (1)
- 19 mOhms (1)
- 2.5 Ohms (1)
- 20 mOhms (3)
- 20 Ohms (1)
- 20.5 mOhms (1)
- 21 mOhms (1)
- 22 mOhms (3)
- 23 mOhms, 23 mOhms (1)
- 230 mOhms (1)
- 24 mOhms (1)
- 25 Ohms (1)
- 265 mOhms (1)
- 27 mOhms (1)
- 29 mOhms (2)
- 290 mOhms (2)
- 3.6 Ohms (2)
- 300 mOhms (1)
- 350 mOhms (1)
- 355 mOhms (1)
- 36 mOhms (1)
- 380 mOhms (1)
- 400 mOhms (1)
- 420 mOhms (5)
- 440 mOhms (4)
- 450 mOhms (2)
- 460 mOhms (1)
- 500 mOhms (8)
- 530 mOhms (1)
- 54 mOhms (1)
- 550 mOhms (3)
- 560 mOhms (6)
- 570 mOhms (1)
- 600 mOhms (5)
- 630 mOhms (2)
- 650 mOhms (2)
- 7 mOhms (1)
- 7.9 mOhms (1)
- 750 mOhms (1)
- 770 mOhms (2)
- 8.5 mOhms (1)
- 80 mOhms (1)
- 800 mOhms (9)
- 840 mOhms (2)
- 850 mOhms (4)
- 9.9 mOhms (1)
- 900 mOhms (3)
- 950 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 1 nC (1)
- 10.9 nC (1)
- 11 nC (4)
- 12 nC (11)
- 12.4 nC (1)
- 12.7 nC (1)
- 13 nC (1)
- 13.4 nC (1)
- 14 nC (4)
- 14.5 nC (3)
- 15 nC (6)
- 16 nC (1)
- 16.5 nC (2)
- 18 nC (2)
- 18.5 nC (3)
- 19 nC (2)
- 19.1 nC (1)
- 20 nC (2)
- 21 nC (2)
- 21.5 nC (1)
- 22 nC (8)
- 23 nC (3)
- 24 nC (2)
- 24.45 nC (1)
- 25 nC (1)
- 250 nC (2)
- 27 nC (2)
- 28 nC (1)
- 28.51 nC (1)
- 30.6 nC (1)
- 39 nC (1)
- 4 nC (1)
- 5.4 nC, 5.4 nC (1)
- 5.8 nC (2)
- 60 nC (7)
- 7 nC (1)
- 8.4 nC (2)
- 8.5 nC (2)
- 8.7 nC (1)
- 80 nC (2)
- 9.8 nC (1)
- Ausgewählter Filter :
140 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
2,974
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 350 mOhms | 3 V | 19 nC | Enhancement | ||||
|
Ein Angebot |
2,462
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
|
Ein Angebot |
950
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 8 A | 550 mOhms | 3 V | 15 nC | Enhancement | |||||
|
Ein Angebot |
2,206
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
|
Ein Angebot |
250
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
|
Ein Angebot |
976
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
|
Ein Angebot |
2,093
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-CH 1500V HI-VOLT PWRMESH PWR MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 8 A | 2.5 Ohms | Enhancement | ||||||
|
Ein Angebot |
6,005
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | SMD/SMT | MLP-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 60 V | 8 A | 17.5 mOhms | PowerTrench | |||||||
|
Ein Angebot |
11,812
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
|
Ein Angebot |
7,332
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 16 mOhms | PowerTrench | ||||||
|
Ein Angebot |
3,714
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | ||||
|
Ein Angebot |
5,356
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 20 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
6,325
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
|
Ein Angebot |
2,673
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 14 nC | UniFET | ||||
|
Ein Angebot |
1,039
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
|
Ein Angebot |
1,071
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
Ein Angebot |
4,193
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 60V 8A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 0.05 Ohms | 1.5 V | 12 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
599
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | ||||
|
Ein Angebot |
2,032
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
|
Ein Angebot |
1,323
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | |||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 600 V Mdmesh 8A | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 530 mOhms | ||||||||||
|
Ein Angebot |
2,167
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 8 A | 450 mOhms | 2 V | 12 nC | Enhancement | ||||
|
Ein Angebot |
2,810
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 290 mOhms | 2 V | 21.5 nC | Enhancement | |||||
|
Ein Angebot |
1,034
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 8 A | 600 mOhms | |||||||
|
Ein Angebot |
874
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | |||||
|
Ein Angebot |
1,021
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 900V N-Chan Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | ||||||
|
Ein Angebot |
847
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 500V N-Channel PowerTrench MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 265 mOhms | Enhancement | ||||||
|
Ein Angebot |
1,049
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 900V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | QFET | |||||
|
Ein Angebot |
913
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 650mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 650 mOhms | 4.5 V | 27 nC | SuperFET II | ||||
|
Ein Angebot |
4,370
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 30V 8A 3W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.02 Ohms | 1.5 V | 14.5 nC | Enhancement | TrenchFET |
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