- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
9 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
327
Verfügbar auf Lager
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 52 mOhms | 3 V | 68 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
2,022
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 18 A | 52 mOhms | Enhancement | QFET | |||||
|
Ein Angebot |
780
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 18 A | 52 mOhms | Enhancement | QFET | |||||
|
Ein Angebot |
783
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | Enhancement | QFET | |||||
|
Ein Angebot |
235
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | 4 V | 94 nC | |||||
|
Ein Angebot |
69
Verfügbar auf Lager
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IXYS | MOSFET MOSFET 650V/60A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 60 A | 52 mOhms | 2.7 V | 107 nC | Enhancement | ||||
|
Ein Angebot |
9
Verfügbar auf Lager
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IXYS | MOSFET tbd Amps 500V 0.06 Ohms Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 70 A | 52 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
|
Ein Angebot |
590
Verfügbar auf Lager
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STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ.... | - 10 V to + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 65 A | 52 mOhms | 1.8 V | 122 nC | Enhancement | ||||
|
Ein Angebot |
1,917
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT 100V 18A 52mOhm 62.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 18 A | 52 mOhms | 62.7 nC |
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