- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
14 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
5,435
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
2,012
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
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Ein Angebot |
99
Verfügbar auf Lager
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ON Semiconductor | MOSFET GAN 600V 17A 150MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 17 A | 340 mOhms | 1.6 V | 6.2 nC | Enhancement | ||||
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Ein Angebot |
695
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
481
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 650V 10.6A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | CoolMOS | ||||||
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Ein Angebot |
360
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
500
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
55
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
485
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 2 V | 32 nC | Enhancement | ||||
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Ein Angebot |
176
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET Nch 600V 11A Si MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 3 V | 22 nC | Enhancement | ||||
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Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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Ein Angebot |
1,000
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET Nch 600V 11A Si MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 3 V | 22 nC | Enhancement | ||||
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siehe | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 2 V | 32 nC | Enhancement | |||||
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Ein Angebot |
236
Verfügbar auf Lager
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Toshiba | MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 340 mOhms | 2.7 V to 3.7 V | 25 nC | DTMOSIV |
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