- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
36 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
5,435
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
2,012
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
|
Ein Angebot |
437
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 900V 15A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 340 mOhms | Enhancement | CoolMOS | |||||
|
Ein Angebot |
1,195
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650V 0.308 Ohm 11 A MDmesh M5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 6.9 A | 340 mOhms | ||||||||||
|
Ein Angebot |
99
Verfügbar auf Lager
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ON Semiconductor | MOSFET GAN 600V 17A 150MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 17 A | 340 mOhms | 1.6 V | 6.2 nC | Enhancement | ||||
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Ein Angebot |
1,323
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 340 mOhms | ||||||||||
|
Ein Angebot |
2,446
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 650 V 0.308 Ohm 11A MDmesh M5 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 340 mOhms | 4 V | 22 nC | |||||
|
Ein Angebot |
2,360
Verfügbar auf Lager
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
2,490
Verfügbar auf Lager
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
480
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 900V 15A I2PAK-3 CoolMOS C3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 340 mOhms | Enhancement | CoolMOS | |||||
|
Ein Angebot |
739
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 39 nC | CoolMOS | |||||
|
Ein Angebot |
695
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
593
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 700V 10.6A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | CoolMOS | ||||||
|
Ein Angebot |
481
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 650V 10.6A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | CoolMOS | ||||||
|
Ein Angebot |
360
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
55
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
293
Verfügbar auf Lager
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 340 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
485
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 2 V | 32 nC | Enhancement | ||||
|
Ein Angebot |
18
Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1 kV | 32 A | 340 mOhms | 3 V | 260 nC | Enhancement | |||||
|
Ein Angebot |
176
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Nch 600V 11A Si MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 3 V | 22 nC | Enhancement | ||||
|
Ein Angebot |
335
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 340 mOhms | Enhancement | ||||||
|
Ein Angebot |
2,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 340 mOhms | 3 V | 26 nC | Enhancement | ||||
|
Ein Angebot |
500
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
1,000
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Nch 600V 11A Si MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 3 V | 22 nC | Enhancement | ||||
|
siehe | IXYS | MOSFET 32 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 340 mOhms | Enhancement | HyperFET | ||||||
|
siehe | Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14.1 A | 340 mOhms | 2.5 V | 24.8 nC | Enhancement | CoolMOS | ||||
|
siehe | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 340 mOhms | 2 V | 32 nC | Enhancement | |||||
|
siehe | Toshiba | MOSFET N-Ch MOS 14A 450V 45W 1800pF 0.34 | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 450 V | 14 A | 340 mOhms | ||||||||||||
|
siehe | IXYS | MOSFET 32 Amps 1200V | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 24 A | 340 mOhms | Enhancement | HyperFET |
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