- Ausgewählter Filter :
1 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
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Verfügbar auf Lager
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ON Semiconductor | MOSFET GAN 600V 9A 290MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 9 A | 350 mOhms | 1.6 V | 6.2 nC | Enhancement |
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