MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	ZXM62P03E6TA	1+ $0.2840 10+ $0.2356 100+ $0.1520 1000+ $0.1216 3000+ $0.1028	Ein Angebot	PDF RFQ	9,201 Verfügbar auf Lager	Diodes Incorporated	MOSFET 30V P-Chnl HDMOS	12 V	SMD/SMT	SOT-26-6	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 1.5 A	230 mOhms			Enhancement
	DMN2230UQ-7	1+ $0.1600 10+ $0.1220 100+ $0.0664 1000+ $0.0496 3000+ $0.0428	Ein Angebot	PDF RFQ	3,960 Verfügbar auf Lager	Diodes Incorporated	MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW	12 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	20 V	2 A	230 mOhms	500 mV	2.3 nC	Enhancement
	ZXM62P03E6TC	10000+ $0.0992 20000+ $0.0952 50000+ $0.0936	Ein Angebot siehe	PDF RFQ		Diodes Incorporated	MOSFET 30V P Chnl HDMOS	12 V	SMD/SMT	SOT-26-6	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 1.5 A	230 mOhms			Enhancement

ZXM62P03E6TA

ZXM62P03E6TA

Diodes Incorporated

MOSFET 30V P-Chnl HDMOS

Stock : 9,201

1+: $0.2840

10+: $0.2356

100+: $0.1520

1000+: $0.1216

3000+: $0.1028

DMN2230UQ-7

DMN2230UQ-7

Diodes Incorporated

MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW

Stock : 3,960

1+: $0.1600

10+: $0.1220

100+: $0.0664

1000+: $0.0496

3000+: $0.0428

ZXM62P03E6TC

ZXM62P03E6TC

Diodes Incorporated

MOSFET 30V P Chnl HDMOS

Stock : 0

10000+: $0.0992

20000+: $0.0952

50000+: $0.0936

Ein Angebot

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