- Hersteller :
- Mounting Style :
- Package / Case :
- Tradename :
- Ausgewählter Filter :
15 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
6,492
Verfügbar auf Lager
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IXYS | MOSFET HiPERFET Id26 BVdass500 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | HyperFET | ||||
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Ein Angebot |
1,261
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-ch 500 Volt 17Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 230 mOhms | 85 nC | Enhancement | ||||
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Ein Angebot |
1,061
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V NCH UNIFET MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 230 mOhms | Enhancement | |||||
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Ein Angebot |
561
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V 20A NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 230 mOhms | Enhancement | |||||
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Ein Angebot |
315
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 230 mOhms | Enhancement | |||||
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Ein Angebot |
190
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET 500V NCH | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | UniFET | ||||
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Ein Angebot |
47
Verfügbar auf Lager
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IXYS | MOSFET 26.0 Amps 500 V 0.23 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | |||||
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siehe | IXYS | MOSFET 26 Amps 500V 0.23 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | 5.5 V | 65 nC | Enhancement | PolarHV | |||
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siehe | IXYS | MOSFET 500V 24A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 500V 24A Q-Class | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 24 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET |
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