MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IPA60R800CEXKSA1	1+ $0.3360 10+ $0.2856 100+ $0.2196 500+ $0.1940	Ein Angebot	PDF RFQ	443 Verfügbar auf Lager	Infineon Technologies	MOSFET N-Ch 600V 5.6A TO220FP-3	20 V	Through Hole	TO-220FP-3	- 40 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	5.6 A	800 mOhms	2.5 V	17.2 nC	Enhancement	CoolMOS
	R6008ANX	1+ $1.1280 10+ $0.9600 100+ $0.7680 500+ $0.6720	Ein Angebot siehe	PDF RFQ		ROHM Semiconductor	MOSFET Trans MOSFET N-CH 600V 8A	30 V	Through Hole	TO-220FP-3			Bulk	1 Channel	Si	N-Channel	600 V	8 A	800 mOhms		21 nC
	IPD60R800CEATMA1	1+ $0.2640 10+ $0.2212 100+ $0.1428 1000+ $0.1144 2500+ $0.0964	Ein Angebot	PDF RFQ	473 Verfügbar auf Lager	Infineon Technologies	MOSFET N-Ch 600V 5.6A DPAK-2	20 V	SMD/SMT	TO-252-3	- 40 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	5.6 A	800 mOhms	2.5 V	17.2 nC	Enhancement	CoolMOS

IPA60R800CEXKSA1

IPA60R800CEXKSA1

Infineon Technologies

MOSFET N-Ch 600V 5.6A TO220FP-3

Stock : 443

1+: $0.3360

10+: $0.2856

100+: $0.2196

500+: $0.1940

R6008ANX

R6008ANX

ROHM Semiconductor

MOSFET Trans MOSFET N-CH 600V 8A

Stock : 0

1+: $1.1280

10+: $0.9600

100+: $0.7680

500+: $0.6720

Ein Angebot

IPD60R800CEATMA1

IPD60R800CEATMA1

Infineon Technologies

MOSFET N-Ch 600V 5.6A DPAK-2

Stock : 473

1+: $0.2640

10+: $0.2212

100+: $0.1428

1000+: $0.1144

2500+: $0.0964

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