- Hersteller :
- Package / Case :
- Tradename :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
537
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | 42 nC | Enhancement | CoolMOS | ||
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Ein Angebot |
628
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | Enhancement | CoolMOS | |||
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Ein Angebot |
496
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 900V 6.9A I2PAK-3 CoolMOS C3 | 20 V | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | Enhancement | CoolMOS | ||||
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siehe | IXYS | MOSFET 13 Amps 900V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 13 A | 800 mOhms | Enhancement | HyperFET |
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