Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
DMTH4007SPD-13
1+
$0.4600
10+
$0.3920
100+
$0.3012
500+
$0.2664
2500+
$0.1864
Ein Angebot
RFQ
1,500
Verfügbar auf Lager
Diodes Incorporated MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A 20 V SMD/SMT PowerDI5060-C-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 4.9 mOhms 2 V 41.9 nC Enhancement  
IPP057N08N3 G
1+
$0.7080
10+
$0.6000
100+
$0.4800
500+
$0.4240
Ein Angebot
RFQ
197
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 80 A 4.9 mOhms 2 V 69 nC Enhancement OptiMOS
IPP057N08N3GXKSA1
1+
$0.7080
10+
$0.6000
100+
$0.4800
500+
$0.4240
Ein Angebot
RFQ
545
Verfügbar auf Lager
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 80 A 4.9 mOhms 2 V 69 nC Enhancement OptiMOS