- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
18 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
23,407
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 73 A | 4.9 mOhms | 1.2 V | 40 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
9,947
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 73 A | 4.9 mOhms | 1.2 V | 40 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
1,858
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.9 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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Ein Angebot |
1,500
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | ||||
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Ein Angebot |
197
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
384
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | ||||||||
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Ein Angebot |
774
Verfügbar auf Lager
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Infineon Technologies | MOSFET MOSFET N CH 60V 95A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 95 A | 4.9 mOhms | 3.7 V | 75 nC | StrongIRFET | ||||
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Ein Angebot |
545
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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Ein Angebot |
556
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 4 V | 180 nC | |||||||
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Ein Angebot |
14
Verfügbar auf Lager
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Texas Instruments | MOSFET 100V, 4.0 mOhm, SON5x6 N-Channel NexFET Power MO... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | |||
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Ein Angebot |
9,950
Verfügbar auf Lager
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Texas Instruments | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | |||
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siehe | Nexperia | MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET | SMD/SMT | LFPAK56-5 | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 4.9 mOhms | |||||||||||
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siehe | Infineon Technologies | MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2 | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.9 mOhms | OptiMOS | |||||||||||
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siehe | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.9 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
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Ein Angebot |
1,679
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.9 mOhms | 1.7 V | 39 nC | |||||
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siehe | Nexperia | MOSFET BUK762R6-40E/D2PAK/REEL 13" Q1 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 4.5 V | 92 nC | ||||||
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Ein Angebot |
80
Verfügbar auf Lager
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Infineon / IR | MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | Enhancement | |||||
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siehe | Infineon Technologies | MOSFET P-Ch -40V -80A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.9 mOhms | OptiMOS |
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