- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
- Ausgewählter Filter :
14 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
3,755
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
4,557
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
4,425
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
1,182
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | |||
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Ein Angebot |
2,492
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET DPAK 100V 40A 24MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 100 V | 41 A | 20 mOhms | ||||||||||
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siehe | Renesas Electronics | MOSFET POWER MOSFET TRANSISTOR | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 20 mOhms | Enhancement | ||||||
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siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 20 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 100V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET STD N-CHNL PWR MOSFE 100V, 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 75 Amps 100V 0.02 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | HyperFET | |||||
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siehe | IXYS | MOSFET 60 Amps 100 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 20 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 60 Amps 100 V 0.033 W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 20 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 75 Amps 100V 0.02 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | ||||||
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siehe | IXYS | MOSFET 75 Amps 100V 0.02 Rds | Through Hole | TO-247-3 | Tube | Si | 100 V | 75 A | 20 mOhms |
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