MOSFET - Inix Electronic

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3 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXTK210P10T	1+ $8.0520 5+ $7.9680 10+ $7.4280 25+ $7.0960	Ein Angebot	PDF RFQ	249 Verfügbar auf Lager	IXYS	MOSFET TrenchP Power MOSFETs	15 V	Through Hole	TO-264-3	- 55 C	+ 150 C	Tube		Si	P-Channel	- 100 V	- 210 A	7.5 mOhms	- 4.5 V	740 nC	Enhancement	TrenchP
	DMP3010LPS-13	1+ $0.3960 10+ $0.3360 100+ $0.2584 500+ $0.2284 2500+ $0.1596	Ein Angebot	PDF RFQ	1,718 Verfügbar auf Lager	Diodes Incorporated	MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS	20 V	SMD/SMT	POWERDI5060-8	- 55 C	+ 150 C	Reel	1 Channel	Si	P-Channel	- 30 V	- 36 A	7.5 mOhms	- 2.1 V	126.2 nC	Enhancement
	IXTX210P10T	1+ $8.0080 5+ $7.9240 10+ $7.3840 25+ $7.0560	Ein Angebot	PDF RFQ	32 Verfügbar auf Lager	IXYS	MOSFET P-Channel: Standard MOSFET	15 V	Through Hole	PLUS-247-3	- 55 C	+ 150 C	Tube		Si	P-Channel	- 100 V	- 210 A	7.5 mOhms	- 4.5 V	740 nC	Enhancement	TrenchP

IXTK210P10T

IXTK210P10T

IXYS

MOSFET TrenchP Power MOSFETs

Stock : 249

1+: $8.0520

5+: $7.9680

10+: $7.4280

25+: $7.0960

DMP3010LPS-13

DMP3010LPS-13

Diodes Incorporated

MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS

Stock : 1,718

1+: $0.3960

10+: $0.3360

100+: $0.2584

500+: $0.2284

2500+: $0.1596

IXTX210P10T

IXTX210P10T

IXYS

MOSFET P-Channel: Standard MOSFET

Stock : 32

1+: $8.0080

5+: $7.9240

10+: $7.3840

25+: $7.0560

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