- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
9,245
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | ||
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Ein Angebot |
4,603
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | ||
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Ein Angebot |
5,400
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | ||
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Ein Angebot |
10,000
Verfügbar auf Lager
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Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | ||
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siehe | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement |
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