- Hersteller :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
10 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
2,067,160
Verfügbar auf Lager
|
Nexperia | MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 360 mA | 1.6 Ohms | 0.6 nC | Enhancement | ||||
|
Ein Angebot |
12,256
Verfügbar auf Lager
|
Nexperia | MOSFET MOSFET N-CH DUAL 60V | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1 Ohms | 0.6 nC | Enhancement | ||||
|
Ein Angebot |
9,245
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
|
Ein Angebot |
4,603
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
|
Ein Angebot |
5,400
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | |||
|
Ein Angebot |
17,206
Verfügbar auf Lager
|
Nexperia | MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1 Ohms | 0.6 nC | Enhancement | ||||
|
Ein Angebot |
5,965
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement | |||
|
Ein Angebot |
10,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
|
siehe | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | ||||
|
siehe | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 300 mA | 3 Ohms | 1 V | 0.6 nC | Enhancement |
1 / 1 Seite