- Mounting Style :
- Package / Case :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||
|
|
Ein Angebot |
2,000
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||
|
|
Ein Angebot |
2,500
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement |
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