- Hersteller :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
171
Verfügbar auf Lager
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IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | ||
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siehe | IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | |||
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Ein Angebot |
395
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFT P-Ch -30V -16A 6.6mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC | ||||||||
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Ein Angebot |
5,000
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET Drive Pch | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 45 V | - 16 A | - 3 V | 16 nC | |||||||
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Ein Angebot |
4
Verfügbar auf Lager
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IXYS | MOSFET -16 Amps -200V 0.22 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 16 A | 160 mOhms | - 5 V | 95 nC | Enhancement | |||
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Ein Angebot |
1,012
Verfügbar auf Lager
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Infineon / IR | MOSFET 1 P-CH -30V HEXFET 6.6mOhms 31nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC |
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